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1

[IEEE IEEE International Symposium on Power Semiconductor Devices and Integrated Circuits - Cambridge, UK (14-17 April 2003)] ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. - Short circuit properties of Trench-/Field-Stop-IGBTs-design aspects for a superior robustness

Laska, T., Miller, G., Pfaffenlehner, M., Turkes, P., Berger, D., Gutsmann, B., Kanschat, P., Munzer, M.

Year:

2003

Language:

english

File:

PDF, 311 KB

english, 2003

2

Electron emission yield of Al, Cu and Au targets induced by fast hydrogen and helium ions

O. Benka, M. Pfaffenlehner, A. Schinner

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1996

Language:

english

File:

PDF, 614 KB

english, 1996

3

[IEEE 2004 24th International Conference on Microelectronics - Nis, Serbia (16-19 May 2004)] 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) - The influence of bulk parameters on the switching behavior of FWDs for traction application

Felsl, H.P., Falck, E., Pfaffenlehner, M., Lutz, J.

Year:

2004

Language:

english

File:

PDF, 228 KB

english, 2004

4

[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - 1700 V-IGBT3: field stop technology with optimized trench structure $trend setting for the high power applications in industry and traction

Pfaffenlehner, M., Laska, T., Mallwitz, R., Mauder, A., Pfirsch, F., Schaeffer, C.

Year:

2000

Language:

english

File:

PDF, 313 KB

english, 2000

5

[IEEE 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Naples, Italy (04-08 June 2006)] 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Source Side Thermal Runaway of Trench IGBTs, Dependence on Design Aspects

Muller-Dauch, A., Pfirsch, F., Pfaffenlehner, M., Silber, D.

Year:

2006

Language:

english

File:

PDF, 2.77 MB

english, 2006

6

[IEEE IC's (ISPSD) - Orlando, FL, USA (2008.05.18-2008.05.22)] 2008 20th International Symposium on Power Semiconductor Devices and IC's - The CIBH Diode - Great Improvement for Ruggedness and Softness of High Voltage Diodes

Felsl, H.P., Pfaffenlehner, M., Schulze, H., Biermann, J., Gutt, Th., Schulze, H.-J., Chen, M., Lutz, J.

Year:

2008

Language:

english

File:

PDF, 265 KB

english, 2008

7

[IEEE IC's (ISPSD) - San Diego, CA, USA (2011.05.23-2011.05.26)] 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - Optimization of diodes using the SPEED concept and CIBH

Pfaffenlehner, Manfred, Felsl, Hans-Peter, Niedernostheide, Franz-Josef, Pfirsch, Frank, Schulze, Hans-Joachim, Baburske, Roman, Lutz, Josef

Year:

2011

Language:

english

File:

PDF, 563 KB

english, 2011

8

Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept

Lutz, Josef, Pfirsch, Frank, Schulze, Hans-Joachim, Baburske, Roman, Felsl, Hans Peter, Niedernostheide, Franz-Josef, Basler, Thomas, Pfaffenlehner, Manfred

Journal:

IET Circuits Devices & Systems

Year:

2014

Language:

english

File:

PDF, 853 KB

english, 2014

9

[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Tailoring of field-stop layers in power devices by hydrogen-related donor formation

Niedernostheide, F.-J., Schulze, H.-J., Felsl, H. P., Hille, F., Laven, J. G., Pfaffenlehner, M., Schaffer, C., Schulze, H., Schustereder, W.

Year:

2016

Language:

english

File:

PDF, 770 KB

english, 2016

10

3.3-kV IGBT modules: How to develop them and what can be achieved?

T. Schutze, J. Biermann, R. Shpanke, M. Pfaffenlehner

Journal:

Russian Electrical Engineering

Year:

2008

Language:

english

File:

PDF, 265 KB

english, 2008

11

Electron emission yield for impact of swift bare light ions on metals

O. Benka, A. Schinner, T. Fink, M. Pfaffenlehner

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1996

Language:

english

File:

PDF, 388 KB

english, 1996

12

Electron-emission yield of Al, Cu, and Au for the impact of swift bare light ions

Benka, O., Schinner, A., Fink, T., Pfaffenlehner, M.

Journal:

Physical Review A

Year:

1995

Language:

english

File:

PDF, 371 KB

english, 1995

13

Flowfield characteristics of an aerodynamic acoustic levitator

Yarin, A. L., Brenn, G., Keller, J., Pfaffenlehner, M., Ryssel, E., Tropea, C.

Journal:

Physics of Fluids

Year:

1997

Language:

english

File:

PDF, 647 KB

english, 1997

14

[IEEE 2005 IEEE 11th European Conference on Power Electronics and Applications - Dresden, Germany ()] 2005 European Conference on Power Electronics and Applications - Switching ruggedness of high-power diodes

Falck, E., Schulze, H.-J., Schmidt, G., Niedernostheide, F.-J., Pfaffenlehner, M.

Year:

2005

Language:

english

File:

PDF, 2.43 MB

english, 2005

15

On the acoustic levitation of droplets

YARIN, A. L., PFAFFENLEHNER, M., TROPEA, C.

Journal:

Journal of Fluid Mechanics

Year:

1998

Language:

english

File:

PDF, 665 KB

english, 1998

16

[IEEE IC's - Kitakyushu, Japan (2004.05.27-2004.05.27)] Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's - New 3300V chip generation with a trench IGBT and an optimized field stop concept with a smooth switching behavior

Pfaffenlehner,, Biermann,, Schaeffer,, Schulze,

Year:

2004

Language:

english

File:

PDF, 268 KB

english, 2004

17

[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Novel emitter controlled diode with copper metallization in ultrathin wafer technology: Setting a performance benchmark

Rodriguez, F. J. Santos, Schloegl, D., Hille, F., Brandt, P.C., Pfaffenlehner, M., Stegner, A.R., Haertl, A.

Year:

2017

File:

PDF, 537 KB

2017